Semiconducting thin films of CuSbS2
In this paper we present a method to produce polycristalline CuSbS2 thin films through a solid-state reaction at 350ºC and 400ºC involving thin film multilayer of Sb2S3-CuS or Cu2-xSe by chemical bath deposition technique. The formation of ternary compound was confirmed by X-ray diffraction (XRD). A...
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| Format: | Article |
| Language: | English |
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Universidad Autónoma de Nuevo León
2011
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| Online Access: | http://eprints.uanl.mx/13464/1/Art5.pdf |
| _version_ | 1824413716047724544 |
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| author | Messina, Sarah Hernández, Paz Peña Méndez, Yolanda |
| author_facet | Messina, Sarah Hernández, Paz Peña Méndez, Yolanda |
| author_sort | Messina, Sarah |
| collection | Repositorio Institucional |
| description | In this paper we present a method to produce polycristalline CuSbS2 thin films through a solid-state reaction at 350ºC and 400ºC involving thin film multilayer of Sb2S3-CuS or Cu2-xSe by chemical bath deposition technique. The formation of ternary compound was confirmed by X-ray diffraction (XRD). A direct optical band gap of approx. 1.57 eV and a p-type electrical conductivity of 10^-3 (?cm)^-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS2 as a suitable absorber material in photovoltaic applications. |
| format | Article |
| id | eprints-13464 |
| institution | UANL |
| language | English |
| publishDate | 2011 |
| publisher | Universidad Autónoma de Nuevo León |
| record_format | eprints |
| spelling | eprints-134642019-06-24T10:52:20Z http://eprints.uanl.mx/13464/ Semiconducting thin films of CuSbS2 Messina, Sarah Hernández, Paz Peña Méndez, Yolanda QD Química In this paper we present a method to produce polycristalline CuSbS2 thin films through a solid-state reaction at 350ºC and 400ºC involving thin film multilayer of Sb2S3-CuS or Cu2-xSe by chemical bath deposition technique. The formation of ternary compound was confirmed by X-ray diffraction (XRD). A direct optical band gap of approx. 1.57 eV and a p-type electrical conductivity of 10^-3 (?cm)^-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS2 as a suitable absorber material in photovoltaic applications. Universidad Autónoma de Nuevo León 2011-12-10 Article PeerReviewed text en cc_by_nc_nd http://eprints.uanl.mx/13464/1/Art5.pdf http://eprints.uanl.mx/13464/1.haspreviewThumbnailVersion/Art5.pdf Messina, Sarah y Hernández, Paz y Peña Méndez, Yolanda (2011) Semiconducting thin films of CuSbS2. Química Hoy, 2 (1). pp. 16-19. ISSN 2007-1183 |
| spellingShingle | QD Química Messina, Sarah Hernández, Paz Peña Méndez, Yolanda Semiconducting thin films of CuSbS2 |
| thumbnail | https://rediab.uanl.mx/themes/sandal5/images/online.png |
| title | Semiconducting thin films of CuSbS2 |
| title_full | Semiconducting thin films of CuSbS2 |
| title_fullStr | Semiconducting thin films of CuSbS2 |
| title_full_unstemmed | Semiconducting thin films of CuSbS2 |
| title_short | Semiconducting thin films of CuSbS2 |
| title_sort | semiconducting thin films of cusbs2 |
| topic | QD Química |
| url | http://eprints.uanl.mx/13464/1/Art5.pdf |
| work_keys_str_mv | AT messinasarah semiconductingthinfilmsofcusbs2 AT hernandezpaz semiconductingthinfilmsofcusbs2 AT penamendezyolanda semiconductingthinfilmsofcusbs2 |