Semiconducting thin films of CuSbS2
In this paper we present a method to produce polycristalline CuSbS2 thin films through a solid-state reaction at 350ºC and 400ºC involving thin film multilayer of Sb2S3-CuS or Cu2-xSe by chemical bath deposition technique. The formation of ternary compound was confirmed by X-ray diffraction (XRD). A...
| Autores principales: | , , |
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| Formato: | Artículo |
| Lenguaje: | inglés |
| Publicado: |
Universidad Autónoma de Nuevo León
2011
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| Materias: | |
| Acceso en línea: | http://eprints.uanl.mx/13464/1/Art5.pdf |
| Sumario: | In this paper we present a method to produce polycristalline CuSbS2 thin films through a solid-state reaction at 350ºC and 400ºC involving thin film multilayer of Sb2S3-CuS or Cu2-xSe by chemical bath deposition technique. The formation of ternary compound was confirmed by X-ray diffraction (XRD). A direct optical band gap of approx. 1.57 eV and a p-type electrical conductivity of 10^-3 (?cm)^-1 were measured. These optoelectronic characteristics show perspective for the use of CuSbS2 as a suitable absorber material in photovoltaic applications. |
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