Preparación de películas delgadas de AS2S3 por depósito químico con perspectivas de aplicacíon en celdas solares
In this paper we obtained thin films of As2S3 by chemical bath deposition. The films were prepared at a temperature of 80 ºC for 3 hours each deposit. They were thermally treated at 180 ºC and 250 ºC for 30 minutes for 1 hour, respectively. The energy gap was calculated 2.9 eV. The conductivity was...
| Autores principales: | , , , , |
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| Formato: | Artículo |
| Lenguaje: | spa |
| Publicado: |
Universidad Autónoma de Nuevo León
2010
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| Materias: | |
| Acceso en línea: | https://quimicahoy.uanl.mx/index.php/r/article/view/52 |