Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited

Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 (&...

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Bibliographic Details

Main Authors:	Gonzalez, Erick, Peña, Yolanda, Gomez, Idalia, Ildusovich, Boris, Hernandez, Tomas, Cavazos, José Luis
Format:	Article
Language:	Spanish
Published:	Universidad Autónoma de Nuevo León 2022
Subjects:	Thin film Cu3BiS3 Chemical Bath Deposition Photovoltaics
Online Access:	https://quimicahoy.uanl.mx/index.php/r/article/view/312