Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 (&...
| Autores principales: | , , , , , |
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| Formato: | Artículo |
| Lenguaje: | spa |
| Publicado: |
Universidad Autónoma de Nuevo León
2022
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| Materias: | |
| Acceso en línea: | https://quimicahoy.uanl.mx/index.php/r/article/view/312 |