Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 (&...
| Autores principales: | , , , , , |
|---|---|
| Formato: | Artículo |
| Lenguaje: | español |
| Publicado: |
Universidad Autónoma de Nuevo León
2022
|
| Materias: | |
| Acceso en línea: | https://quimicahoy.uanl.mx/index.php/r/article/view/312 |
| Sumario: | Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 ( Ω-cm)-1. A second layer of Cu3BiS3 was deposited over the first one, thickness increased to 450 nm and band gap energy was 1 eV and electrical conductivity approximately 1 ( Ω-cm)-1. |
|---|---|
| Descripción Física: | Quimica Hoy; Vol. 11 No. 04 (2022): octubre-diciembre 2022; 6-9 Quimica Hoy; Vol. 11 Núm. 04 (2022): octubre-diciembre 2022; 6-9 2007-1183 |