Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited

Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 (&...

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Autores principales: Gonzalez, Erick, Peña, Yolanda, Gomez, Idalia, Ildusovich, Boris, Hernandez, Tomas, Cavazos, José Luis
Formato: Artículo
Lenguaje:español
Publicado: Universidad Autónoma de Nuevo León 2022
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Acceso en línea:https://quimicahoy.uanl.mx/index.php/r/article/view/312
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author Gonzalez, Erick
Peña, Yolanda
Gomez, Idalia
Ildusovich, Boris
Hernandez, Tomas
Cavazos, José Luis
author_facet Gonzalez, Erick
Peña, Yolanda
Gomez, Idalia
Ildusovich, Boris
Hernandez, Tomas
Cavazos, José Luis
author_sort Gonzalez, Erick
collection Artículos de Revistas UANL
description Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 ( Ω-cm)-1. A second layer of Cu3BiS3 was deposited over the first one, thickness increased to 450 nm and band gap energy was 1 eV and electrical conductivity approximately 1 ( Ω-cm)-1.
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physical Quimica Hoy; Vol. 11 No. 04 (2022): octubre-diciembre 2022; 6-9
Quimica Hoy; Vol. 11 Núm. 04 (2022): octubre-diciembre 2022; 6-9
2007-1183
publishDate 2022
publisher Universidad Autónoma de Nuevo León
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spelling quimicahoy-article-3122023-02-14T15:06:16Z Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited Gonzalez, Erick Peña, Yolanda Gomez, Idalia Ildusovich, Boris Hernandez, Tomas Cavazos, José Luis Thin film Cu3BiS3 Chemical Bath Deposition Photovoltaics Cu3BiS3 thin films with values of thickness 170 nm were obtained; these films were characterized using X-ray diffraction, Electron Microscopy Scanning, UV-Vis spectrophotometry, and photoconductivity. We obtained values of bang gap energy 1.65 eV and electrical conductivity approximately 2.58 ( Ω-cm)-1. A second layer of Cu3BiS3 was deposited over the first one, thickness increased to 450 nm and band gap energy was 1 eV and electrical conductivity approximately 1 ( Ω-cm)-1. Universidad Autónoma de Nuevo León 2022-12-13 info:eu-repo/semantics/article info:eu-repo/semantics/publishedVersion Peer review articles Articulos evaluados por pares application/pdf https://quimicahoy.uanl.mx/index.php/r/article/view/312 10.29105/qh11.04-312 Quimica Hoy; Vol. 11 No. 04 (2022): octubre-diciembre 2022; 6-9 Quimica Hoy; Vol. 11 Núm. 04 (2022): octubre-diciembre 2022; 6-9 2007-1183 spa https://quimicahoy.uanl.mx/index.php/r/article/view/312/284 https://creativecommons.org/licenses/by/4.0
spellingShingle Thin film
Cu3BiS3
Chemical Bath Deposition
Photovoltaics
Gonzalez, Erick
Peña, Yolanda
Gomez, Idalia
Ildusovich, Boris
Hernandez, Tomas
Cavazos, José Luis
Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
thumbnail https://rediab.uanl.mx/themes/sandal5/images/article.gif
title Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
title_full Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
title_fullStr Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
title_full_unstemmed Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
title_short Characterization of CusBiS3 thin films annealing layers of BizS3-CuS chemically deposited
title_sort characterization of cusbis3 thin films annealing layers of bizs3 cus chemically deposited
topic Thin film
Cu3BiS3
Chemical Bath Deposition
Photovoltaics
topic_facet Thin film
Cu3BiS3
Chemical Bath Deposition
Photovoltaics
url https://quimicahoy.uanl.mx/index.php/r/article/view/312
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