Semiconducting Thin Films of CuSbS2

In this paper we present amethod to produce polycrystalline CuSbS2 thin ?lms tbrough a solid-state reaction at 350ºC and 400ºC involving thin?lm multilayer of Sb2S3-CuS or C2-x Se by chemical bathdeposition technique. The formationoftheterna:ry compound was con:firmed by X-ray di?raction (XRD). A di...

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Bibliographic Details
Main Authors: Messina, Sarah, Hernández, Paz, Peña Méndez, Yolanda
Format: Article
Language:English
Published: 2011
Subjects:
Online Access:http://eprints.uanl.mx/2595/1/Art5.pdf
Description
Summary:In this paper we present amethod to produce polycrystalline CuSbS2 thin ?lms tbrough a solid-state reaction at 350ºC and 400ºC involving thin?lm multilayer of Sb2S3-CuS or C2-x Se by chemical bathdeposition technique. The formationoftheterna:ry compound was con:firmed by X-ray di?raction (XRD). A direct optica1 band gap of approx. 1.57 eV and a p-type electrical conductivity of 103 (Ω.cm) were m.easured. These optoelectronic chamcteristics showperspective forthe use of CuSbS2 as a suitable absorber material in photovoltaic applications.