Semiconducting Thin Films of CuSbS2
In this paper we present amethod to produce polycrystalline CuSbS2 thin ?lms tbrough a solid-state reaction at 350ºC and 400ºC involving thin?lm multilayer of Sb2S3-CuS or C2-x Se by chemical bathdeposition technique. The formationoftheterna:ry compound was con:firmed by X-ray di?raction (XRD). A di...
| Autores principales: | , , |
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| Formato: | Artículo |
| Lenguaje: | inglés |
| Publicado: |
2011
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| Materias: | |
| Acceso en línea: | http://eprints.uanl.mx/2595/1/Art5.pdf |
| Sumario: | In this paper we present amethod to produce polycrystalline CuSbS2 thin ?lms tbrough a solid-state reaction at 350ºC and 400ºC involving thin?lm multilayer of Sb2S3-CuS or C2-x Se by chemical bathdeposition technique. The formationoftheterna:ry compound was con:firmed by X-ray di?raction (XRD). A direct optica1 band gap of approx. 1.57 eV and a p-type electrical conductivity of 103 (Ω.cm) were m.easured. These optoelectronic chamcteristics showperspective forthe use of CuSbS2 as a suitable absorber material in photovoltaic applications. |
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