AC plasma induced modifications in Sb2S3thin films
Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma tre...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2010
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| Online Access: | http://eprints.uanl.mx/15084/1/755.pdf |
| _version_ | 1824414252574703616 |
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| author | Calixto Rodriguez, María Estela Castillo, F. Martínez, Heriberto Peña Méndez, Yolanda Sánchez Juárez, Arón |
| author_facet | Calixto Rodriguez, María Estela Castillo, F. Martínez, Heriberto Peña Méndez, Yolanda Sánchez Juárez, Arón |
| author_sort | Calixto Rodriguez, María Estela |
| collection | Repositorio Institucional |
| description | Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb2S3 thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10 to 10 ( cm) due to the annealing effect. |
| format | Article |
| id | eprints-15084 |
| institution | UANL |
| language | English |
| publishDate | 2010 |
| record_format | eprints |
| spelling | eprints-150842020-06-09T21:11:18Z http://eprints.uanl.mx/15084/ AC plasma induced modifications in Sb2S3thin films Calixto Rodriguez, María Estela Castillo, F. Martínez, Heriberto Peña Méndez, Yolanda Sánchez Juárez, Arón Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb2S3 thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10 to 10 ( cm) due to the annealing effect. 2010 Article PeerReviewed text en cc_by_nc_nd http://eprints.uanl.mx/15084/1/755.pdf http://eprints.uanl.mx/15084/1.haspreviewThumbnailVersion/755.pdf Calixto Rodriguez, María Estela y Castillo, F. y Martínez, Heriberto y Peña Méndez, Yolanda y Sánchez Juárez, Arón (2010) AC plasma induced modifications in Sb2S3thin films. Journal of Physics: Conference Series, 207. 012019. ISSN 1742-6596 http://doi.org/10.1088/1742-6596/207/1/012019 doi:10.1088/1742-6596/207/1/012019 |
| spellingShingle | Calixto Rodriguez, María Estela Castillo, F. Martínez, Heriberto Peña Méndez, Yolanda Sánchez Juárez, Arón AC plasma induced modifications in Sb2S3thin films |
| thumbnail | https://rediab.uanl.mx/themes/sandal5/images/online.png |
| title | AC plasma induced modifications in Sb2S3thin films |
| title_full | AC plasma induced modifications in Sb2S3thin films |
| title_fullStr | AC plasma induced modifications in Sb2S3thin films |
| title_full_unstemmed | AC plasma induced modifications in Sb2S3thin films |
| title_short | AC plasma induced modifications in Sb2S3thin films |
| title_sort | ac plasma induced modifications in sb2s3thin films |
| url | http://eprints.uanl.mx/15084/1/755.pdf |
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