AC plasma induced modifications in Sb2S3thin films
Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma tre...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
2010
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| Online Access: | http://eprints.uanl.mx/15084/1/755.pdf |
| Summary: | Sb2S3 thin films, deposited by the chemical bath deposition method, were treated with N2 plasma at 3.0 Torr during several minutes. The as-prepared Sb2S3 thin films and films treated with N2 plasma have been characterized using several techniques. X-ray diffraction studies have shown that plasma treatment induced recrystallization on the as-prepared Sb2S3 thin films. The band gap values decreased from 2.37 to 1.82 eV after plasma treatment, and the electrical conductivity increased from 10 to 10 ( cm) due to the annealing effect. |
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