Thin films of AgIn5(S/Se)8 prepared in a two stage process.
AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8-xSex alloy was achievable through the post-deposition treatment at 350 and 400 C. X-ray diffraction and energy dispersi...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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Springer
2016
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| Online Access: | http://eprints.uanl.mx/13620/1/Articulo%20AgIn5%28SSe%298%202016.pdf |
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| author | Messina, Sarah Rodríguez Lazcano, Yamilet Campos, J. Peña Méndez, Yolanda Barrios Salgado, Enue |
| author_facet | Messina, Sarah Rodríguez Lazcano, Yamilet Campos, J. Peña Méndez, Yolanda Barrios Salgado, Enue |
| author_sort | Messina, Sarah |
| collection | Repositorio Institucional |
| description | AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8-xSex alloy was achievable through the post-deposition treatment at 350 and 400 C. X-ray diffraction and energy dispersive X-ray analyses were performed on the samples. The direct optical band gap value Eg for the films was found to be as the order of
1.75 eV at room temperature. The photo-response measurements exhibited that AgIn5(S/Se)8 thin films are photoconductive and p-type electrical conductivity of
6.6 9 10-6 (X cm)-1 and thermoelectric power of +18 lV/K. |
| format | Article |
| id | eprints-13620 |
| institution | UANL |
| language | English |
| publishDate | 2016 |
| publisher | Springer |
| record_format | eprints |
| spelling | eprints-136202024-12-09T18:17:09Z http://eprints.uanl.mx/13620/ Thin films of AgIn5(S/Se)8 prepared in a two stage process. Messina, Sarah Rodríguez Lazcano, Yamilet Campos, J. Peña Méndez, Yolanda Barrios Salgado, Enue Biología y Química AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8-xSex alloy was achievable through the post-deposition treatment at 350 and 400 C. X-ray diffraction and energy dispersive X-ray analyses were performed on the samples. The direct optical band gap value Eg for the films was found to be as the order of 1.75 eV at room temperature. The photo-response measurements exhibited that AgIn5(S/Se)8 thin films are photoconductive and p-type electrical conductivity of 6.6 9 10-6 (X cm)-1 and thermoelectric power of +18 lV/K. Springer 2016-10-19 Article PeerReviewed text en cc_by_nc_nd http://eprints.uanl.mx/13620/1/Articulo%20AgIn5%28SSe%298%202016.pdf http://eprints.uanl.mx/13620/1.haspreviewThumbnailVersion/Articulo%20AgIn5%28SSe%298%202016.pdf Messina, Sarah y Rodríguez Lazcano, Yamilet y Campos, J. y Peña Méndez, Yolanda y Barrios Salgado, Enue (2016) Thin films of AgIn5(S/Se)8 prepared in a two stage process. Materials in Electronics, 27 (10). ISSN 0957-4522 https://link.springer.com/journal/10854/27/10/page/1 doi10.1007/s10854-016-5730-8 |
| spellingShingle | Biología y Química Messina, Sarah Rodríguez Lazcano, Yamilet Campos, J. Peña Méndez, Yolanda Barrios Salgado, Enue Thin films of AgIn5(S/Se)8 prepared in a two stage process. |
| thumbnail | https://rediab.uanl.mx/themes/sandal5/images/online.png |
| title | Thin films of AgIn5(S/Se)8 prepared in a two stage process. |
| title_full | Thin films of AgIn5(S/Se)8 prepared in a two stage process. |
| title_fullStr | Thin films of AgIn5(S/Se)8 prepared in a two stage process. |
| title_full_unstemmed | Thin films of AgIn5(S/Se)8 prepared in a two stage process. |
| title_short | Thin films of AgIn5(S/Se)8 prepared in a two stage process. |
| title_sort | thin films of agin5 s se 8 prepared in a two stage process |
| topic | Biología y Química |
| url | http://eprints.uanl.mx/13620/1/Articulo%20AgIn5%28SSe%298%202016.pdf |
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