Thin films of AgIn5(S/Se)8 prepared in a two stage process.
AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8-xSex alloy was achievable through the post-deposition treatment at 350 and 400 C. X-ray diffraction and energy dispersi...
| Autores principales: | , , , , |
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| Formato: | Artículo |
| Lenguaje: | inglés |
| Publicado: |
Springer
2016
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| Materias: | |
| Acceso en línea: | http://eprints.uanl.mx/13620/1/Articulo%20AgIn5%28SSe%298%202016.pdf |
| Sumario: | AgIn5(S/Se)8 thin films were prepared by sequential chemical deposition of In2S3–Ag2Se stack films and post-deposition thermal annealing in N2 atmosphere. The formations of AgIn5S8-xSex alloy was achievable through the post-deposition treatment at 350 and 400 C. X-ray diffraction and energy dispersive X-ray analyses were performed on the samples. The direct optical band gap value Eg for the films was found to be as the order of
1.75 eV at room temperature. The photo-response measurements exhibited that AgIn5(S/Se)8 thin films are photoconductive and p-type electrical conductivity of
6.6 9 10-6 (X cm)-1 and thermoelectric power of +18 lV/K. |
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