CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films.
In this work, we report the formation of CuInS2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In2S3) at 300 and 350 ◦C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the mu...
| Autores principales: | , , , , , |
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| Formato: | Artículo |
| Lenguaje: | inglés |
| Publicado: |
North-Holland
2011
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| Materias: | |
| Acceso en línea: | http://eprints.uanl.mx/13613/1/Articulo%20CuInS2%20thin%20films.pdf |
| _version_ | 1836397358005354496 |
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| author | Peña Méndez, Yolanda Lugo Loredo, Shadai Calixto Rodriguez, María Estela Váquez Dimas, Alejandro Gómez de la Fuente, María Idalia del Consuelo Elizondo Martínez, Perla |
| author_facet | Peña Méndez, Yolanda Lugo Loredo, Shadai Calixto Rodriguez, María Estela Váquez Dimas, Alejandro Gómez de la Fuente, María Idalia del Consuelo Elizondo Martínez, Perla |
| author_sort | Peña Méndez, Yolanda |
| collection | Repositorio Institucional |
| description | In this work, we report the formation of CuInS2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In2S3) at 300 and 350 ◦C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS2 (JCPDS27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10−8 to 3 −1 cm−1 depending on the thickness of the CuS film. CIS films showed p-type conductivity. |
| format | Article |
| id | eprints-13613 |
| institution | UANL |
| language | English |
| publishDate | 2011 |
| publisher | North-Holland |
| record_format | eprints |
| spelling | eprints-136132025-06-27T18:27:51Z http://eprints.uanl.mx/13613/ CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films. Peña Méndez, Yolanda Lugo Loredo, Shadai Calixto Rodriguez, María Estela Váquez Dimas, Alejandro Gómez de la Fuente, María Idalia del Consuelo Elizondo Martínez, Perla Biología y Química In this work, we report the formation of CuInS2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In2S3) at 300 and 350 ◦C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS2 (JCPDS27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10−8 to 3 −1 cm−1 depending on the thickness of the CuS film. CIS films showed p-type conductivity. North-Holland 2011-06-01 Article PeerReviewed text en cc_by_nc_nd http://eprints.uanl.mx/13613/1/Articulo%20CuInS2%20thin%20films.pdf http://eprints.uanl.mx/13613/1.haspreviewThumbnailVersion/Articulo%20CuInS2%20thin%20films.pdf Peña Méndez, Yolanda y Lugo Loredo, Shadai y Calixto Rodriguez, María Estela y Váquez Dimas, Alejandro y Gómez de la Fuente, María Idalia del Consuelo y Elizondo Martínez, Perla (2011) CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films. Applied surface science, 257 (6). pp. 2193-2196. ISSN 0169-4332 doi.org/10.1016/j.apsusc.2010.09.071 |
| spellingShingle | Biología y Química Peña Méndez, Yolanda Lugo Loredo, Shadai Calixto Rodriguez, María Estela Váquez Dimas, Alejandro Gómez de la Fuente, María Idalia del Consuelo Elizondo Martínez, Perla CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films. |
| thumbnail | https://rediab.uanl.mx/themes/sandal5/images/online.png |
| title | CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films. |
| title_full | CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films. |
| title_fullStr | CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films. |
| title_full_unstemmed | CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films. |
| title_short | CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films. |
| title_sort | cuins2 thin films obtained through the annealing of chemically deposited in2s3 cus thin films |
| topic | Biología y Química |
| url | http://eprints.uanl.mx/13613/1/Articulo%20CuInS2%20thin%20films.pdf |
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