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CuInS2 thin films obtained through the annealing of chemically deposited In2S3–CuS thin films.

In this work, we report the formation of CuInS2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In2S3) at 300 and 350 ◦C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the mu...

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Detalles Bibliográficos
Autores principales: Peña Méndez, Yolanda, Lugo Loredo, Shadai, Calixto Rodriguez, María Estela, Váquez Dimas, Alejandro, Gómez de la Fuente, María Idalia del Consuelo, Elizondo Martínez, Perla
Formato: Artículo
Lenguaje:inglés
Publicado: North-Holland 2011
Materias:
Biología y Química
Acceso en línea:http://eprints.uanl.mx/13613/1/Articulo%20CuInS2%20thin%20films.pdf
Descripción
Sumario:In this work, we report the formation of CuInS2 thin films on glass substrates by heating chemically deposited multilayers of copper sulfide (CuS) and indium sulfide (In2S3) at 300 and 350 ◦C in nitrogen atmosphere at 10 Torr. CIS thin films were prepared by varying the CuS layer thickness in the multilayers with indium sulfide. The XRD analysis showed that the crystallographic structure of the CuInS2 (JCPDS27-0159) is present on the deposited films. From the optical analysis it was estimated the band gap value for the CIS film (1.49 eV). The electrical conductivity varies from 3 × 10−8 to 3 −1 cm−1 depending on the thickness of the CuS film. CIS films showed p-type conductivity.

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