Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance

In this study, low-temperature synthesis of a Nb2SnC non-MAX phase was carried out via solid-state reaction, and a novel approach was introduced to synthesize 2D Nb2CTx MXenes through selective etching of Sn from Nb2SnC using mild phosphoric acid. Our work provides valuable insights into the field o...

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Autores principales: Singh, Karan Kishor, Pushpan, Soorya, Loredo, Shadai Lugo, Cerdán-Pasarán, Andrea, Hernández-Magallanes, J. A., Sanal, K. C.
Formato: Artículo
Lenguaje:inglés
inglés
Publicado: Multidisciplinary Digital Publishing Institute 2023
Acceso en línea:http://eprints.uanl.mx/30173/1/1455.pdf
http://eprints.uanl.mx/30173/7/30173.pdf
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author Singh, Karan Kishor
Pushpan, Soorya
Loredo, Shadai Lugo
Cerdán-Pasarán, Andrea
Hernández-Magallanes, J. A.
Sanal, K. C.
author_facet Singh, Karan Kishor
Pushpan, Soorya
Loredo, Shadai Lugo
Cerdán-Pasarán, Andrea
Hernández-Magallanes, J. A.
Sanal, K. C.
author_sort Singh, Karan Kishor
collection Repositorio Institucional
description In this study, low-temperature synthesis of a Nb2SnC non-MAX phase was carried out via solid-state reaction, and a novel approach was introduced to synthesize 2D Nb2CTx MXenes through selective etching of Sn from Nb2SnC using mild phosphoric acid. Our work provides valuable insights into the field of 2D MXenes and their potential for energy storage applications. Various techniques, including XRD, SEM, TEM, EDS, and XPS, were used to characterize the samples and determine their crystal structures and chemical compositions. SEM images revealed a two-dimensional layered structure of Nb2CTx, which is consistent with the expected morphology of MXenes. The synthesized Nb2CTx showed a high specific capacitance of 502.97 Fg−1 at 1 Ag−1 , demonstrating its potential for high-performance energy storage applications. The approach used in this study is low-cost and could lead to the development of new energy storage materials. Our study contributes to the field by introducing a unique method to synthesize 2D Nb2CTx MXenes and highlights its potential for practical applications.
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spelling eprints-301732025-07-01T15:46:32Z http://eprints.uanl.mx/30173/ Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance Singh, Karan Kishor Pushpan, Soorya Loredo, Shadai Lugo Cerdán-Pasarán, Andrea Hernández-Magallanes, J. A. Sanal, K. C. In this study, low-temperature synthesis of a Nb2SnC non-MAX phase was carried out via solid-state reaction, and a novel approach was introduced to synthesize 2D Nb2CTx MXenes through selective etching of Sn from Nb2SnC using mild phosphoric acid. Our work provides valuable insights into the field of 2D MXenes and their potential for energy storage applications. Various techniques, including XRD, SEM, TEM, EDS, and XPS, were used to characterize the samples and determine their crystal structures and chemical compositions. SEM images revealed a two-dimensional layered structure of Nb2CTx, which is consistent with the expected morphology of MXenes. The synthesized Nb2CTx showed a high specific capacitance of 502.97 Fg−1 at 1 Ag−1 , demonstrating its potential for high-performance energy storage applications. The approach used in this study is low-cost and could lead to the development of new energy storage materials. Our study contributes to the field by introducing a unique method to synthesize 2D Nb2CTx MXenes and highlights its potential for practical applications. Multidisciplinary Digital Publishing Institute 2023-04-30 Article PeerReviewed text en cc_by_nc_nd http://eprints.uanl.mx/30173/1/1455.pdf http://eprints.uanl.mx/30173/1.haspreviewThumbnailVersion/1455.pdf text en http://eprints.uanl.mx/30173/7/30173.pdf http://eprints.uanl.mx/30173/7.haspreviewThumbnailVersion/30173.pdf Singh, Karan Kishor y Pushpan, Soorya y Loredo, Shadai Lugo y Cerdán-Pasarán, Andrea y Hernández-Magallanes, J. A. y Sanal, K. C. (2023) Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance. Materials, 16 (9). p. 3488. ISSN 1996-1944 doi:10.3390/ma16093488
spellingShingle Singh, Karan Kishor
Pushpan, Soorya
Loredo, Shadai Lugo
Cerdán-Pasarán, Andrea
Hernández-Magallanes, J. A.
Sanal, K. C.
Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance
thumbnail https://rediab.uanl.mx/themes/sandal5/images/online.png
title Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance
title_full Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance
title_fullStr Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance
title_full_unstemmed Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance
title_short Safe etching route of Nb2SnC for the synthesis of two-dimensional Nb2CTx MXene: an electrode material with improved electrochemical performance
title_sort safe etching route of nb2snc for the synthesis of two dimensional nb2ctx mxene an electrode material with improved electrochemical performance
url http://eprints.uanl.mx/30173/1/1455.pdf
http://eprints.uanl.mx/30173/7/30173.pdf
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