| Summary: | Vanadium nitride has displayed many interesting characteristics for its use as a pseudocapacitive electrode in an electrochemical capacitor, such as good electronic conductivity, good thermal stability, high density and high specific capacitance. Thin films of VN were prepared by D.C. reactive magnetron sputtering. The electrochemical stability of the films as well as the influence of dissolved oxygen in 1MKOH electrolyte were investigated. In order to avoid material as well as electrolyte degradation, it was concluded that vanadium nitride should only be cycled between −0.4 and −1.0 V vs. Hg/HgO. After a 24 hours stabilization period, the prepared VN thin film showed an initial capacitance of 19 mF.cm−2 and a capacity retention of 96% after 10000 cycles. Furthermore, dissolved oxygen in the electrolyte was demonstrated to cause self-discharge up to a potential above −0.4 V vs. Hg/HgO, where VN was shown to be unstable. Additionally, the presence of oxygen was shown to shift the open circuit potential of a VN electrode to about 0 V through self-discharge processes.
|
|---|
