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Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing.

AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3–Ag2S layers at 400 ◦C in N2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, Eg, of 1.86 eV and an electrical conductivity valu...

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Bibliographic Details
Main Authors: Lugo Loredo, Shadai, Peña Méndez, Yolanda, Calixto Rodriguez, María Estela, López Mata, C., Ramón, M.L., Gómez de la Fuente, María Idalia del Consuelo, Acosta, A.
Format: Article
Language:English
Published: North-Holland 2012
Subjects:
Biología y Química
Online Access:http://eprints.uanl.mx/13618/1/Articulo%20chemically%20AgS%20In2S3.pdf
Description
Summary:AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3–Ag2S layers at 400 ◦C in N2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, Eg, of 1.86 eV and an electrical conductivity value of 1.2 × 10−3 ( cm)−1.

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