Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing.
AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3–Ag2S layers at 400 ◦C in N2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, Eg, of 1.86 eV and an electrical conductivity valu...
| Autores principales: | , , , , , , |
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| Formato: | Artículo |
| Lenguaje: | inglés |
| Publicado: |
North-Holland
2012
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| Materias: | |
| Acceso en línea: | http://eprints.uanl.mx/13618/1/Articulo%20chemically%20AgS%20In2S3.pdf |
| _version_ | 1836397358149009408 |
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| author | Lugo Loredo, Shadai Peña Méndez, Yolanda Calixto Rodriguez, María Estela López Mata, C. Ramón, M.L. Gómez de la Fuente, María Idalia del Consuelo Acosta, A. |
| author_facet | Lugo Loredo, Shadai Peña Méndez, Yolanda Calixto Rodriguez, María Estela López Mata, C. Ramón, M.L. Gómez de la Fuente, María Idalia del Consuelo Acosta, A. |
| author_sort | Lugo Loredo, Shadai |
| collection | Repositorio Institucional |
| description | AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3–Ag2S layers at 400 ◦C in N2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, Eg, of 1.86 eV and an electrical conductivity value of 1.2 × 10−3 ( cm)−1. |
| format | Article |
| id | eprints-13618 |
| institution | UANL |
| language | English |
| publishDate | 2012 |
| publisher | North-Holland |
| record_format | eprints |
| spelling | eprints-136182025-06-27T18:24:21Z http://eprints.uanl.mx/13618/ Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing. Lugo Loredo, Shadai Peña Méndez, Yolanda Calixto Rodriguez, María Estela López Mata, C. Ramón, M.L. Gómez de la Fuente, María Idalia del Consuelo Acosta, A. Biología y Química AgInS2 thin films were obtained by the annealing of chemical bath deposited In2S3–Ag2S layers at 400 ◦C in N2 for 1 h. According to the XRD and EDX results the chalcopyrite structure of AgInS2 has been obtained. These films have an optical band gap, Eg, of 1.86 eV and an electrical conductivity value of 1.2 × 10−3 ( cm)−1. North-Holland 2012-12-15 Article PeerReviewed text en cc_by_nc_nd http://eprints.uanl.mx/13618/1/Articulo%20chemically%20AgS%20In2S3.pdf http://eprints.uanl.mx/13618/1.haspreviewThumbnailVersion/Articulo%20chemically%20AgS%20In2S3.pdf Lugo Loredo, Shadai y Peña Méndez, Yolanda y Calixto Rodriguez, María Estela y López Mata, C. y Ramón, M.L. y Gómez de la Fuente, María Idalia del Consuelo y Acosta, A. (2012) Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing. Applied surface science, 263. pp. 440-444. ISSN 0169-4332 doi.org/10.1016/j.apsusc.2012.09.077 |
| spellingShingle | Biología y Química Lugo Loredo, Shadai Peña Méndez, Yolanda Calixto Rodriguez, María Estela López Mata, C. Ramón, M.L. Gómez de la Fuente, María Idalia del Consuelo Acosta, A. Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing. |
| thumbnail | https://rediab.uanl.mx/themes/sandal5/images/online.png |
| title | Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing. |
| title_full | Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing. |
| title_fullStr | Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing. |
| title_full_unstemmed | Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing. |
| title_short | Chemically deposited In2S3–Ag2S layers to obtain AgInS2 thin films by thermal annealing. |
| title_sort | chemically deposited in2s3 ag2s layers to obtain agins2 thin films by thermal annealing |
| topic | Biología y Química |
| url | http://eprints.uanl.mx/13618/1/Articulo%20chemically%20AgS%20In2S3.pdf |
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