A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2.
As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), en...
| Autores principales: | , , , , , , , |
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| Formato: | Artículo |
| Lenguaje: | inglés |
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North-Holland
2010
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| Materias: | |
| Acceso en línea: | http://eprints.uanl.mx/13611/1/Articulo%20A%20comparative.pdf |
| _version_ | 1824413744340402176 |
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| author | Calixto Rodriguez, María Estela Martínez Valencia, Horacio Peña Méndez, Yolanda Flores Cedillo, Osvaldo Esparza Ponce, Hilda Esperanza Sánchez Juárez, Arón Campos Alvarez, José Reyes Romero, Pedro Guillermo |
| author_facet | Calixto Rodriguez, María Estela Martínez Valencia, Horacio Peña Méndez, Yolanda Flores Cedillo, Osvaldo Esparza Ponce, Hilda Esperanza Sánchez Juárez, Arón Campos Alvarez, José Reyes Romero, Pedro Guillermo |
| author_sort | Calixto Rodriguez, María Estela |
| collection | Repositorio Institucional |
| description | As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV–vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb2S3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the postdeposition
treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (Eg) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb2S3 thin films decreased from 108 to 106 V-cm after plasma treatments. |
| format | Article |
| id | eprints-13611 |
| institution | UANL |
| language | English |
| publishDate | 2010 |
| publisher | North-Holland |
| record_format | eprints |
| spelling | eprints-136112018-10-17T16:01:42Z http://eprints.uanl.mx/13611/ A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. Calixto Rodriguez, María Estela Martínez Valencia, Horacio Peña Méndez, Yolanda Flores Cedillo, Osvaldo Esparza Ponce, Hilda Esperanza Sánchez Juárez, Arón Campos Alvarez, José Reyes Romero, Pedro Guillermo Biología y Química As-deposited antimony sulfide thin films prepared by chemical bath deposition were treated with nitrogen AC plasma and thermal annealing in nitrogen atmosphere. The as-deposited, plasma treated, and thermally annealed antimony sulfide thin films have been characterized by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy, scanning electron microscopy, atomic force microscopy, UV–vis spectroscopy, and electrical measurements. The results have shown that post-deposition treatments modify the crystalline structure, the morphology, and the optoelectronic properties of Sb2S3 thin films. X-ray diffraction studies showed that the crystallinity of the films was improved in both cases. Atomic force microscopy studies showed that the change in the film morphology depends on the postdeposition treatment used. Optical emission spectroscopy (OES) analysis revealed the plasma etching on the surface of the film, this fact was corroborated by the energy dispersive X-ray spectroscopy analysis. The optical band gap of the films (Eg) decreased after post-deposition treatments (from 2.36 to 1.75 eV) due to the improvement in the grain sizes. The electrical resistivity of the Sb2S3 thin films decreased from 108 to 106 V-cm after plasma treatments. North-Holland 2010-02-01 Article PeerReviewed text en cc_by_nc_nd http://eprints.uanl.mx/13611/1/Articulo%20A%20comparative.pdf http://eprints.uanl.mx/13611/1.haspreviewThumbnailVersion/Articulo%20A%20comparative.pdf Calixto Rodriguez, María Estela y Martínez Valencia, Horacio y Peña Méndez, Yolanda y Flores Cedillo, Osvaldo y Esparza Ponce, Hilda Esperanza y Sánchez Juárez, Arón y Campos Alvarez, José y Reyes Romero, Pedro Guillermo (2010) A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. Applied surface science, 256 (8). pp. 2428-2433. ISSN 0169-4332 doi.org/10.1016/j.apsusc.2009.10.081 |
| spellingShingle | Biología y Química Calixto Rodriguez, María Estela Martínez Valencia, Horacio Peña Méndez, Yolanda Flores Cedillo, Osvaldo Esparza Ponce, Hilda Esperanza Sánchez Juárez, Arón Campos Alvarez, José Reyes Romero, Pedro Guillermo A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. |
| thumbnail | https://rediab.uanl.mx/themes/sandal5/images/online.png |
| title | A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. |
| title_full | A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. |
| title_fullStr | A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. |
| title_full_unstemmed | A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. |
| title_short | A comparative study of the physical properties of Sb2S3 thin films treated with N2 AC plasma and thermal annealing in N2. |
| title_sort | comparative study of the physical properties of sb2s3 thin films treated with n2 ac plasma and thermal annealing in n2 |
| topic | Biología y Química |
| url | http://eprints.uanl.mx/13611/1/Articulo%20A%20comparative.pdf |
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