Thin films of arsenic sulfide by chemical deposition and formation of InAs

We report a method for obtaining thin films of arsenic sulfide by chemical bath deposition and the subsequent formation of InAs by heating the films with a vacuum-deposited coating of In. X-ray diffraction (XRD) studies have shown that the thin film deposited from chemical baths of pH ∼2, prepared...

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Autores principales: Peña Méndez, Yolanda, Nair Maileppallil, Santhamma, Nair Padmanabhan, Karunakaran
Formato: Artículo
Lenguaje:inglés
Publicado: Universidad Nacional Autónoma de México 2006
Materias:
Acceso en línea:http://eprints.uanl.mx/13610/1/Articulo%20InAs.pdf
_version_ 1824413743975497728
author Peña Méndez, Yolanda
Nair Maileppallil, Santhamma
Nair Padmanabhan, Karunakaran
author_facet Peña Méndez, Yolanda
Nair Maileppallil, Santhamma
Nair Padmanabhan, Karunakaran
author_sort Peña Méndez, Yolanda
collection Repositorio Institucional
description We report a method for obtaining thin films of arsenic sulfide by chemical bath deposition and the subsequent formation of InAs by heating the films with a vacuum-deposited coating of In. X-ray diffraction (XRD) studies have shown that the thin film deposited from chemical baths of pH ∼2, prepared by mixing aqueous acidic solutions of As(III) with sodium thiosulfate, is a composite film of crystalline As2O3 and As2S3, with the incorporation of sulfur. When heated at 150–250 ◦C, the As2O3 component transforms to As2S3, but still with very few identifiable peaks in the XRD patterns of the annealed samples. The films have a direct band gap of ≈2.7 eV (as-prepared) and ≈2.52 eV (heated at 250 ◦C), with forbidden optical transitions. The sheet resistance of the film (300 nm thick) is 1012 Ω, and the electrical conductivity is 10−8 Ω−1 cm−1. After being heated in a sulfur-rich atmosphere at >200 ◦C, the films show photosensitivity. The As2O3/As2S3 thin film with an evaporated indium film, when heated at 250 ◦C in nitrogen or air, produces InAs as a major crystalline component. In this case, In2S3 or In2O3 may be present as a minor component in the films, depending on whether heating is done in nitrogen or air, respectively. The optical band gap of this InAs component is direct, 0.5 to 0.8 eV, depending on the film thickness and heating process. These composite films are photosensitive; a dark conductivity of 0.05 Ω−1 cm−1 in the films formed in nitrogen is ascribed to InAs and 5 Ω−1 cm−1 in the films formed by heating in air is ascribed to the In2O3 component. The photoconductivity of the films is of the same order of magnitude as the dark conductivity in each case.
format Article
id eprints-13610
institution UANL
language English
publishDate 2006
publisher Universidad Nacional Autónoma de México
record_format eprints
spelling eprints-136102019-06-21T09:58:21Z http://eprints.uanl.mx/13610/ Thin films of arsenic sulfide by chemical deposition and formation of InAs Peña Méndez, Yolanda Nair Maileppallil, Santhamma Nair Padmanabhan, Karunakaran Biología y Química We report a method for obtaining thin films of arsenic sulfide by chemical bath deposition and the subsequent formation of InAs by heating the films with a vacuum-deposited coating of In. X-ray diffraction (XRD) studies have shown that the thin film deposited from chemical baths of pH ∼2, prepared by mixing aqueous acidic solutions of As(III) with sodium thiosulfate, is a composite film of crystalline As2O3 and As2S3, with the incorporation of sulfur. When heated at 150–250 ◦C, the As2O3 component transforms to As2S3, but still with very few identifiable peaks in the XRD patterns of the annealed samples. The films have a direct band gap of ≈2.7 eV (as-prepared) and ≈2.52 eV (heated at 250 ◦C), with forbidden optical transitions. The sheet resistance of the film (300 nm thick) is 1012 Ω, and the electrical conductivity is 10−8 Ω−1 cm−1. After being heated in a sulfur-rich atmosphere at >200 ◦C, the films show photosensitivity. The As2O3/As2S3 thin film with an evaporated indium film, when heated at 250 ◦C in nitrogen or air, produces InAs as a major crystalline component. In this case, In2S3 or In2O3 may be present as a minor component in the films, depending on whether heating is done in nitrogen or air, respectively. The optical band gap of this InAs component is direct, 0.5 to 0.8 eV, depending on the film thickness and heating process. These composite films are photosensitive; a dark conductivity of 0.05 Ω−1 cm−1 in the films formed in nitrogen is ascribed to InAs and 5 Ω−1 cm−1 in the films formed by heating in air is ascribed to the In2O3 component. The photoconductivity of the films is of the same order of magnitude as the dark conductivity in each case. Universidad Nacional Autónoma de México 2006-02-24 Article PeerReviewed text en cc_by_nc_nd http://eprints.uanl.mx/13610/1/Articulo%20InAs.pdf http://eprints.uanl.mx/13610/1.haspreviewThumbnailVersion/Articulo%20InAs.pdf Peña Méndez, Yolanda y Nair Maileppallil, Santhamma y Nair Padmanabhan, Karunakaran (2006) Thin films of arsenic sulfide by chemical deposition and formation of InAs. Semiconductor Science and Technology., 21 (4). pp. 450-461. ISSN 1361-6641 doi:10.1088/0268-1242/21/4/007
spellingShingle Biología y Química
Peña Méndez, Yolanda
Nair Maileppallil, Santhamma
Nair Padmanabhan, Karunakaran
Thin films of arsenic sulfide by chemical deposition and formation of InAs
thumbnail https://rediab.uanl.mx/themes/sandal5/images/online.png
title Thin films of arsenic sulfide by chemical deposition and formation of InAs
title_full Thin films of arsenic sulfide by chemical deposition and formation of InAs
title_fullStr Thin films of arsenic sulfide by chemical deposition and formation of InAs
title_full_unstemmed Thin films of arsenic sulfide by chemical deposition and formation of InAs
title_short Thin films of arsenic sulfide by chemical deposition and formation of InAs
title_sort thin films of arsenic sulfide by chemical deposition and formation of inas
topic Biología y Química
url http://eprints.uanl.mx/13610/1/Articulo%20InAs.pdf
work_keys_str_mv AT penamendezyolanda thinfilmsofarsenicsulfidebychemicaldepositionandformationofinas
AT nairmaileppallilsanthamma thinfilmsofarsenicsulfidebychemicaldepositionandformationofinas
AT nairpadmanabhankarunakaran thinfilmsofarsenicsulfidebychemicaldepositionandformationofinas